| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device where deformation of contact holes formed in an interlayer insulating film is prevented and a stable contact can be obtained and to provide a manufacturing method of the device. <P>SOLUTION: The contact holes 21 to 23 are formed by etching the interlayer insulating films 20 and 17. A groove is not formed in a guard ring part 4. Ions are implanted for compensating the contact in source/drain regions in a peripheral circuit part 2. High temperature annealing is performed for activating the implanted impurities. An interlayer insulating film 28, a storage capacitor and an interlayer insulating film 35 are sequentially formed. In the peripheral circuit part 2, a contact hole 36 reaching a part of a wiring layer 25 is formed. In the guard ring part 4, a groove 37 reaching a diffusion layer 15 is formed. Barrier metal films 38 are formed in the contact hole 36 and the groove 37, and contact plugs 39 formed of W films are embedded in them. <P>COPYRIGHT: (C)2004,JPO |
