发明名称 |
MEMORY ARCHITECTURE WITH MEMORY CELL GROUPS |
摘要 |
An improved cell design for series memory architecture is disclosed. The improved cell design facilitates the formation of capacitors using a single etch process instead of two, as conventionally required. In one embodiment, each capacitor of a capacitor pair is provided with at least one plug contacting a common diffusion region of two adjacent cell transistors. In another embodiment, a large plug with sufficient overlap to the bottom electrodes of pair of capacitors is used.
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申请公布号 |
US2004056286(A1) |
申请公布日期 |
2004.03.25 |
申请号 |
US20020065123 |
申请日期 |
2002.09.19 |
申请人 |
JACOB MICHAEL;HILLIGER ANDREAS;ROEHR THOMAS;SHUTO SUSUMO;OZAKI TORU |
发明人 |
JACOB MICHAEL;HILLIGER ANDREAS;ROEHR THOMAS;SHUTO SUSUMO;OZAKI TORU |
分类号 |
G11C11/22;H01L21/8246;H01L27/115;(IPC1-7):H01L29/94 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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