发明名称 |
Test key for detecting electrical isolation between a word line and a deep trench capacitor in dram cells |
摘要 |
A test key includes a substrate, a deep trench capacitor formed in the substrate, and at least one active region defined on the substrate. The active region comprises a first region, a second region and an ion well. A thermal oxide layer is formed in the first region. A top-thin oxide layer is formed in the second region. The second region overlaps with the deep trench capacitor. At least one word line partially overlapping with the top-thin oxide layer. The ion well is electrically connected with a polysilicon electrode of the deep trench capacitor. The thermal oxide layer within the first region does not overlap with any word line.
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申请公布号 |
US2004056248(A1) |
申请公布日期 |
2004.03.25 |
申请号 |
US20020065187 |
申请日期 |
2002.09.25 |
申请人 |
LIU CHIH-CHENG;LIAO WEI-WU;WANG CHUAN FU |
发明人 |
LIU CHIH-CHENG;LIAO WEI-WU;WANG CHUAN FU |
分类号 |
H01L23/544;(IPC1-7):H01L23/58 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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