发明名称 Polishing media for chemical mechanical planarization (CMP)
摘要 A polishing media for chemical mechanical planarization (CMP) includes a layer comprised of a CMP pad material having a water-soluble material comprised of cyclodextrin dispersed therein. The layer may form part of a pad configured for rotary CMP or part of a belt pad configured for linear CMP. In one method for conducting a CMP operation, a polishing media having a layer comprised of a CMP pad material with a water-soluble material comprised of cyclodextrin dispersed therein is contacted with a slurry, water, or an aqueous solution to remove the water-soluble material comprised of cyclodextrin from the CMP pad material. In another method, the water-soluble material comprised of cyclodextrin is removed from the CMP pad material before the CMP operation.
申请公布号 US2004058623(A1) 申请公布日期 2004.03.25
申请号 US20030367439 申请日期 2003.02.14
申请人 LAM RESEARCH CORPORATION 发明人 LIN JIBING;CHARATAN ROBERT
分类号 B24B37/04;B24B37/22;B24B37/24;B24D3/32;B24D3/34;(IPC1-7):B24B1/00 主分类号 B24B37/04
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