| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile ferroelectric memory control device used for controlling internal memory dump when a ferroelectric memory is used as an internal memory in a SOC (System On a Chip) structure. <P>SOLUTION: This nonvolatile ferroelectric memory control device is composed of a dump mode control circuit, and FRAM code cells so as to normally process internal memory data in a normal mode and in a dump mode, and is so structured that all the internal addresses can normally use ports in the dump mode by processing them by allotting the entire external memory region to the internal memory region. <P>COPYRIGHT: (C)2004,JPO</p> |
