发明名称 METHOD FOR PULLING SILICON SINGLE CRYSTAL UNDER MAGNETIC FIELD APPLICATION
摘要 PROBLEM TO BE SOLVED: To suppress the return of twist or the kink of a wire cable for pulling up a silicon single crystal rod. SOLUTION: A silicon melt 12 is stored in a quartz crucible 13 provided in a chamber 11, a horizontal magnetic field formed by a pair of exciting coils 31 is applied to the silicon melt and a seed crystal 24 is dipped into the molten liquid and pulled up while rotating the wire cable 23 to form a neck part 25a. The silicon single crystal rod 25 is formed on the lower part of the neck part by pulling up the wire cable further to move the seed crystal upward while rotating it. In the case that the diameter of the neck part 21a is≤6 mm and the diameter of the silicon single crystal rod 25 is≥300 mm, the exciting coils 31 and 31 are made saddle like and the wire cable 23 is rotated so that the seed crystal is rotated at≥8 revolution/min to≤12 revolution/min in the formation of the silicon single crystal rod 25. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004091240(A) 申请公布日期 2004.03.25
申请号 JP20020252592 申请日期 2002.08.30
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 MORITA HIROSHI
分类号 C30B29/06;C30B15/00;C30B15/08;(IPC1-7):C30B29/06 主分类号 C30B29/06
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