| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device and its manufacturing method in which a memory cell is reduced in size and a write operating voltage is suppressed low. SOLUTION: There are provided a first gate electrode 4A provided on a first insulating film and a second gate electrode 4B provided on a second insulating film 3B and a second insulating film. First and second diffused layers, the first insulating film and a first gate electrode are formed as a first memory cell, and second and third diffused layers, the second insulating film and a second gate electrode are formed as a second memory cell. The first and second gate electrodes 4A, 4B are connected in common and formed as a word line electrode, and the first and second diffused layers 2A, 2B are connected to first and second reading lines arranged in an upper layer of a substrate. Further, a second diffused layer 2C is connected to a write and erase exclusive bit line arranged in the upper layer of the substrate, to write selected memory cell transistors by hot electron implantation and to erase by hot hole implantation. COPYRIGHT: (C)2004,JPO
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