| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser and a method of manufacturing the same to obtain satisfactory single wavelength output by sufficiently separating a boundary and an active layer of a grating forming region so that crystal distortion is not generated in the active layer by means of a recess portion (stepped portion) even when unwanted recess portion (stepped portion) is formed in the area near the boundary of the grating forming region and also provide an adequate value for separation between the boundary and active layer of the grating forming region considering the drawing distance and drawing time of the electron beam when the electron beam exposing method is introduced. SOLUTION: A DFB laser 101 is provided with the grating 102 formed on the surface of an n-type InP substrate 2 and the stripped active layer 5 of the multiple well structure. The length Wg in the direction perpendicular to the waveguide direction of the grating 102 is set to 30 to 60 times the length (active layer width Wa) in the direction perpendicular to the waveguide direction of the active layer 5 in order to sufficiently separate the boundary of the forming region of the grating 102 from the active layer 5. COPYRIGHT: (C)2004,JPO
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