| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having satisfactory element characteristics. SOLUTION: In this method for manufacturing a semiconductor device, (a) a gate insulating layer 12 and a gate electrode 14 are successively formed on a p-type semiconductor substrate 10; (b) n-type impurity is introduced to the semiconductor substrate 10 with the gate electrode 14 as a mask, and then heat treatment is carried out, and first impurity areas 32 and 42 are formed; (c) a side wall insulating layer 16 is formed on the side face of the gate electrode 14; and (d) n-type impurity is introduced, and a second impurity area for source/drain areas 30 and 40 is formed. In the above mentioned (b), phosphorous is ion-injected with an acceleration energy which is 0.2 to 2keV to introduce impurity. COPYRIGHT: (C)2004,JPO
|
