| 摘要 |
PROBLEM TO BE SOLVED: To reduce the lateral diffusion of an impurity while the concentration uniformity of the impurity in the depthwise direction is improved. SOLUTION: After a defect-introduced layer 3 is formed in a substrate by injecting Si or an inert gas into the substrate through ion implantation IPI, an impurity-injected layer 4 is formed by injecting impurity into the layer 3 through ion implantation IP2, and the impurity in the layer 4 is thermally diffused along the defect-introduced layer 3. COPYRIGHT: (C)2004,JPO
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