发明名称 GASEOUS RAW MATERIAL SUPPLY SYSTEM FOR THIN FILM FORMING APPARATUS AND THIN FILM FORMING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a gaseous raw material supply system of a thin film forming apparatus, which system can prevent gaseous raw materials from being mixed in order to expedite changing over of the gaseous raw materials, and can uniformly spread the gaseous raw materials over the entire surface of a substrate in order to perform uniform deposition and the thin film forming apparatus. SOLUTION: The gaseous raw material supply system for the thin film forming apparatus for supplying the gaseous raw materials from a gaseous raw material supply source 20 and for treating the substrate 11 existing in a reaction chamber 10 has a main supply pipe 30 which is connected to the supply source 20 and a branch pipe 40 which is branched so that its first end 41 connects to the supply pipe 30 and a plurality of second ends 42 connect to the reaction chamber 10. The conductance of the first end 41 is equal to that of the plurality of respective second ends 42. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004091848(A) 申请公布日期 2004.03.25
申请号 JP20020253671 申请日期 2002.08.30
申请人 TOKYO ELECTRON LTD 发明人 KAWANAMI HIROSHI;ISHIZAKA TADAHIRO;KOJIMA YASUHIKO;OSHIMA YASUHIRO;SHIGEOKA TAKASHI
分类号 C23C16/455;H01L21/205;(IPC1-7):C23C16/455 主分类号 C23C16/455
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