| 摘要 |
First, a lower film of AlNd Alloy and an upper film of MoW alloy are deposited in succession, and then patterned by an etchant including HNO3 of 0.1-10%, H3PO4 of 65-55%, CH3COOH of 5-20%, a stabilizer of 0.1-5% and the other ultra pure eater, to form a gate wire including a gate line, a gate electrode and a gate pad on a substrate. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in succession, and then, MoW alloy is deposited and patterned by an etchant including HNO3 of 0.1-10%, H3PO4 of 65-55%, CH3COOH of 5-20%, a stabilizer of 0.1-5% and the other ultra pure water, to form a data wire including a data line intersecting the gate line, a source electrode, a drain electrode and a data pad. Next, a passivation layer is deposited and patterned to form contact holes for exposing the drain electrode, the gate pad and the data pad, respectively. Then, IZO is deposited and patterned to form a pixel electrode, an auxiliary gate pad and an auxiliary data pad electrically connected to the drain electrode, the gate pad and data pad, respectively.
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