| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device using nitride semiconductor materials such as InGaAlN with better characteristic and in the state of being easy to manufacture. <P>SOLUTION: On a cladding layer 104, an active layer 105 is formed. The active layer 105 is a layer of structure where a plurality of island-shaped parts 105a consisting of InN are arrayed on the same plane, and each island-shaped part 105a is formed to have e.g. a diameter of about 2nm and a height of about 1nm. By saving the dimensions of the island-shaped parts 105a to be not larger than widening of an electronic wave function, a quantum effect is obtained. With the dimensions of the island-shaped parts 105a, the light-emitting wavelength of the semiconductor light-emitting device by the active layer 105 is almost decided. <P>COPYRIGHT: (C)2004,JPO |
