| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance a light-emitting efficiency without damaging te function of protecting the light-emitting layer. <P>SOLUTION: A p-type layer, having a three-layer structure consisting of first to third layers, is arranged contacting the light-emitting layer 7. An n-type AlGaN layer 9, which is the first layer, serves as a protecting layer, and a GaN:Mg layer 11, which is the third layer, serves as a contact layer, while an AlGaN:Mg layer 10, which is the second layer and which is positioned between the first layer and the third layer, serves as an intermediate layer. By arranging the intermediate layer, even if the layer thickness of the n-type AlGaN layer 9 is reduced, it is possible to adequately protect the InGaN layer 8 from the heat applied during the growth of the upper layers. As a consequence, the GaN:Mg layer 11 can be close to the light-emitting layer 7, enhancing the injection efficiency of holes to the light-emitting layer 7, and hence enhancing the light-emitting efficiency. <P>COPYRIGHT: (C)2004,JPO |
