| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor element by which a minute high molecular insulating film with a high insulating property can easily be created as a gate insulating film without using a vacuum device and a process for patterning the gate insulating film is not required and to provide a manufacturing method of the element. SOLUTION: A gate electrode 12 is formed on a glass substrate 11, and poly (1,4-bis (2-methylstyryl) benzene) (bis-MSB) is dissolved in benzonitrile comprising tetrabutyl ammonium tetrafluoroborate by 0.1mol/1. Then, the glass substrate 11 where the gate electrode 12 is formed is put in solution, and a minute poly (bis-MSB) film is formed by an electrochemical polymerization method. COPYRIGHT: (C)2004,JPO
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