VERTICAL INSULATED GATE FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To facilitate design of a breakdown voltage of a bidirectional Zener diode which is formed from a diffusion layer on the same chip as a diode for protecting a power MOSFET. SOLUTION: In an N-drain area 1, a P-type voltage resistant area 14is formed simultaneously with a P well 13, and a P-type diffusion layer 3 and an N+-type diffusion layer 4 are formed simultaneously with a P base area 5 and an N+source area 6. Then, a bidirectional Zener diode ZDGconnected between a drain and a gate is composed of an N+drain area 2, the P-type voltage resistant area 14 and the P-type diffusion layer 3, and the N+-type diffusion layer 4. COPYRIGHT: (C)2004,JPO