发明名称 Element Storage Layer in Integrated Circuits
摘要 Reduced degradation to capacitor properties is disclosed. A hydrogen storage layer is provided over at least a portion a top capacitor electrode. The hydrogen storage layer absorbs and stores hydrogen, preventing hydrogen from diffusing to the capacitor. The hydrogen storage layer comprises, for example, lanthium nitride, titanium zirconium nitride, amorphous sm-co, nanostructured carbon, or a combination thereof.
申请公布号 US2004057193(A1) 申请公布日期 2004.03.25
申请号 US20030250209 申请日期 2003.06.13
申请人 MOON BUM KI;BEITEL GERHARD 发明人 MOON BUM KI;BEITEL GERHARD
分类号 H01G4/228;H01L21/02;H01L21/768;H01L21/8246;H01L27/115;(IPC1-7):H01G4/228 主分类号 H01G4/228
代理机构 代理人
主权项
地址