A METHOD OF FORMING SURFACE ALTERATION OF METAL INTERCONNECT IN INTEGRATED CIRCUITS FOR ELECTROMIGRATION AND ADHESION IMPROVEMENT

摘要

Described is a method and apparatus for altering the top surface of a metal interconnect. In one embodiment of the invention, a metal interconnect and a barrier layer are formed into an interlayer dielectric (ILD) and the metal interconnect and the barrier layer are planarized to the top of the ILD. The top surfaces of the metal interconnect, the barrier layer, and the ILD are altered with a second metal to form an electromigration barrier. In one embodiment of the invention, the second metal is prevented from contaminating the electrical resistivity of the metal interconnect.