METHOD FOR FABRICATING A GATE STRUCTURE OF A FIELD EFFECT TRANSISTOR

摘要

A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask (229) on regions of the substrate. The first mask is defined using lithographic techniques. A second mask (214) is then conformably formed on one or more sidewalls of the first mask. The features are formed on the substrate by removing the first mask and then etching the substrate using the second mask as an etch mask.