SILICON SINGLE CRYSTAL, EPITAXIAL WAFER AND THEIR MANUFACTURING PROCESSES

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal which yields an epitaxial wafer which has no epitaxial defect and shows a good in-plane uniformity concerning oxygen precipitation density and an excellent IG (intrinsic gettering) effect, the epitaxial wafer and their manufacturing processes. SOLUTION: The epitaxial defect is drastically suppressed without employing any means which results in productivity deterioration such as a reduced pull-up speed of the single crystal, by quenching the pulled single crystal at 1,100-900°C, i.e. at a cooling rate of≥3.0°C/min within the temperature range and reducing a size of a Crown-in oxygen precipitation nucleus. COPYRIGHT: (C)2004,JPO