| 摘要 |
The invention relates to a reactor for a liquid phase epitaxy on semiconductor substrates. The inventive reactor comprises a growth chamber which is provided with a temporary storage area which makes it possible to temporarily store at least one substrate. The growth chamber is embodied in such a way that it is pivotable between a reserve position in which a molten masse contained in the growth chamber is accumulated in the temporary storage area, and an epitaxy position in which the molten masse contained in the growth chamber is accumulated in the epitaxy area in order to produce the epitaxy of a crystalline layer on the substrate stored therein. The inventive epitaxy method is also disclosed. |
