| 摘要 |
PROBLEM TO BE SOLVED: To prevent a specific voltage-driven semiconductor device from breaking down under an excessive current, by matching the switching timings of semiconductor elements, when the voltage-driven semiconductor elements connected in parallel are turned on/off. SOLUTION: A control circuit, has a gate line or an emitter line of IGBTQ1 and IGBTQ2, which is a voltage-driven semiconductor devices connected in parallel in an upper arm, is magnetically-coupled by a magnetic circuit MC1, while a gate line or an emitter line of IGBTQ3 and IGBTQ4, which are the voltage-driven semiconductor devices connected in parallel in a lower arm, is magnetically-coupled by a magnetic circuit MC2. COPYRIGHT: (C)2004,JPO
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