| 摘要 |
The object of the present invention is to lower the oscillation threshold value and to improve the yield by improving the luminous efficiency in the central wavelength of a laser. To achieve the object, the nitride semiconductor light emitting element of the present invention includes a substrate, a lower clad layer formed of a nitride semiconductor containing Al and Ga formed thereon, a lower guide layer formed of a nitride semiconductor mainly containing In and Ga formed thereon, and an active layer including a nitride semiconductor mainly containing In and Ga formed thereon. The lower guide layer has a first layer and a second layer higher in In content than the first layer, successively stacked from the active layer side.
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