Production of a semiconductor component e.g. IGBT with a drift and a field stop layer comprises preparing a semiconductor layer having a base doping and an exposed front side, and introducing doping atoms into a drift zone region

摘要

Production of semiconductor component with drift zone (23) of first conductivity connected to field stop layer (20) of first conductivity more strongly doped than drift zone comprises preparing semiconductor layer having base doping and exposed front side (101), and introducing dopants of second conductivity via front side into drift zone region from front side to prescribed depth which is lower than semiconductor layer thickness. Production of a semiconductor component with a drift zone (23) of a first conductivity and a field stop layer (20) of a first conductivity more strongly doped than the drift zone and connected to it comprises preparing a semiconductor layer having a base doping and an exposed front side (101), and introducing doping atoms of a second conductivity via the front side into a drift zone region which extends from the front side up to a prescribed depth which is lower than the thickness of the semiconductor layer. An Independent claim is also included for a semiconductor component produced by the above process.