| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor optical element in which a forbidden bandwidth is changed from ultraviolet to infrared while keeping the grating matching with an Si substrate. <P>SOLUTION: The semiconductor optical element has an active layer composed of the mixed crystal of four or more elements of a group II-VI chemical compound of group II elements mainly containing Zn and group VI elements containing at least O and containing two or more of S, Se and Te. It is preferable to use the mixed crystal represented by a general expression ZnS<SB>x</SB>Se<SB>y</SB>Te<SB>z</SB>O<SB>1-x-y-z</SB>((x), (y) and (z) are atomic ratios of S, Se and Te). <P>COPYRIGHT: (C)2004,JPO |
