| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate provided with a semiconductor layer having a stable structure and partially different thicknesses. <P>SOLUTION: In this semiconductor substrate 600, a semiconductor layer which is identical to a semiconductor layer 230 formed as the active layer of a first semiconductor layer 610 is formed in a second semiconductor device 620, and at the same time, divided into upper and lower semiconductor layers 220 and 240 by forming an insulating layer 210 in the semiconductor layer. Of the semiconductor layers 220 and 240, the upper semiconductor layer 220 is formed as the active layer of the second semiconductor device 620. Therefore, the thickness of the semiconductor layer 220 formed in the second semiconductor device 620 becomes thinner than that of the semiconductor layer 230 formed in the first semiconductor device 610. <P>COPYRIGHT: (C)2004,JPO</p> |
