| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of forming stable and reliable wiring structure even in the case of using a fine contact hole in Cu wiring. SOLUTION: The method comprises a step of forming a diffusion prevention film 16 and an insulating film 18 on an insulating film 12 formed on a substrate 10 and having the Cu wiring 14 embedded therein, forming the contact hole 20 extending to the Cu wiring 14 at the insulating film 18, washing the substrate 10 having the contact hole 20 with a chemical, drying the substrate 10 washed with the chemical, and annealing the dried substrate in reductive atmosphere. COPYRIGHT: (C)2004,JPO
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