发明名称 |
METHOD OF DIFFUSING IMPURITY, AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which allows efficient diffusion of only a specified impurity element. SOLUTION: The method of manufacturing a semiconductor device comprises processes of introducing a prescribed impurity element into a semiconductor substrate, forming an impurity diffused region in the semiconductor substrate by radiating the light of a frequency resonating the characteristic frequency of the impurity element to diffuse the impurity element, and forming a semiconductor element on the semiconductor substrate. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004095613(A) |
申请公布日期 |
2004.03.25 |
申请号 |
JP20020250935 |
申请日期 |
2002.08.29 |
申请人 |
FUJITSU LTD |
发明人 |
TAKAHASHI HIDEKI;KANEDA HIROSHI |
分类号 |
H01L21/76;H01L21/22;H01L21/268;H01L21/322;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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