发明名称 METHOD OF DIFFUSING IMPURITY, AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which allows efficient diffusion of only a specified impurity element. SOLUTION: The method of manufacturing a semiconductor device comprises processes of introducing a prescribed impurity element into a semiconductor substrate, forming an impurity diffused region in the semiconductor substrate by radiating the light of a frequency resonating the characteristic frequency of the impurity element to diffuse the impurity element, and forming a semiconductor element on the semiconductor substrate. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004095613(A) 申请公布日期 2004.03.25
申请号 JP20020250935 申请日期 2002.08.29
申请人 FUJITSU LTD 发明人 TAKAHASHI HIDEKI;KANEDA HIROSHI
分类号 H01L21/76;H01L21/22;H01L21/268;H01L21/322;(IPC1-7):H01L21/22 主分类号 H01L21/76
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