发明名称 MEMORY TEST CIRCUIT
摘要 PROBLEM TO BE SOLVED: To realize a memory test circuit capable of changing test contents by adding necessary minimum external terminals for a test and a circuit. SOLUTION: This memory test circuit is provided with: signal generating circuits for respectively generating a CS signal, an address signal, a data signal and an R/W signal of a memory to be tested; and a test setting control circuit for generating the control data of these signal generating circuits. The signal generating circuits and the test setting control circuit have shift registers, and control data and test data are serially inputted to these shift registers from external terminals. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004095028(A) 申请公布日期 2004.03.25
申请号 JP20020253329 申请日期 2002.08.30
申请人 NEC ELECTRONICS CORP 发明人 KAWASAKI TATSUYA
分类号 G01R31/28;G01R31/3185;G11C29/00;G11C29/12;G11C29/14;H01L21/822;H01L27/04;(IPC1-7):G11C29/00;G01R31/318 主分类号 G01R31/28
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