| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor for improving the breakdown characteristics, increasing the sensitivity, expanding the rangeability, and reducing output ripples. SOLUTION: The semiconductor pressure sensor provided with a semiconductor chip; a recess that is provided at the semiconductor chip for composing a diaphragm that is a strain-generating body in the semiconductor chip; a semiconductor pressure detection element that is provided at the strain-generating section in the semiconductor chip; and a chip support substrate whose one surface is connected to the semiconductor chip and is made of an insulating material for composing the recess and a pressure introducing chamber, is characterized in that the semiconductor pressure sensor has a static pressure distortion correction ring in a ring shape that is provided between the semiconductor chip and the chip supporting substrate and composes the pressure introducing chamber along with the recess and the chip supporting substrate. COPYRIGHT: (C)2004,JPO
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