| 发明名称 |
Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method |
| 摘要 |
A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
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| 申请公布号 |
US2004056259(A1) |
申请公布日期 |
2004.03.25 |
| 申请号 |
US20030606176 |
申请日期 |
2003.06.25 |
| 申请人 |
GOTO OSAMU;ASANO TAKEHARU;SUZUKI YASUHIKO;TAKEYA MOTONOBU;SHIBUYA KATSUYOSHI;MIZUNO TAKASHI;TOJO TSUYOSHI;UCHIDA SHIRO;IKEDA MASAO |
发明人 |
GOTO OSAMU;ASANO TAKEHARU;SUZUKI YASUHIKO;TAKEYA MOTONOBU;SHIBUYA KATSUYOSHI;MIZUNO TAKASHI;TOJO TSUYOSHI;UCHIDA SHIRO;IKEDA MASAO |
| 分类号 |
H01L21/205;B82Y10/00;B82Y20/00;B82Y40/00;H01L33/00;H01S5/20;H01S5/22;H01S5/323;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/205 |
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