发明名称 |
METHOD FOR FORMING A SELF-ALIGNED CONTACT OF A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
A method for forming a self-aligned contact in a semiconductor device which can reduce process failures and a method for manufacturing a semiconductor device that includes the self-aligned contact are provided. A self-aligned contact hole is formed in an interlayer dielectric film to expose a portion of the substrate between conductive structures formed thereon. A buffer layer is formed on a sidewall of the self-aligned contact hole, on the bottom of the self-aligned contact hole, and on the interlayer dielectric film such that the thickness of the buffer layer at an upper portion of the self-aligned contact hole is greater than the thickness of the buffer layer at the bottom of the self-aligned contact hole. After removing the portion of the buffer layer on the bottom of the self-aligned contact hole, a contact is formed in the self-aligned contact hole to make contact with the substrate.
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申请公布号 |
US2004056281(A1) |
申请公布日期 |
2004.03.25 |
申请号 |
US20030348017 |
申请日期 |
2003.01.22 |
申请人 |
SHIN SEUNG-MOK;HAN JAE-JONG;HWANG KI-HYUN |
发明人 |
SHIN SEUNG-MOK;HAN JAE-JONG;HWANG KI-HYUN |
分类号 |
H01L21/28;H01L21/336;H01L21/60;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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