发明名称 Semiconductor integrated circuit device having a test circuit of a random access memory
摘要 32 pseudo-random numbers respectively indicated by 5 bits are successively generated in a test address generating unit, a serial output signal denoting one pair of pseudo-random numbers of 10 bits are input to 10 flip-flops serially arranged in an address shift register for each clock cycle, a read address expressed by a string of bits output from the flip-flops of odd-numbered stages is input to a read port of a RAM to perform a read test for one memory cell of the read address, and a write address expressed by a string of bits output from the flip-flops of even-numbered stages is input to a write port of the RAM to perform a write test for one memory cell of the write address. The read test and the write test for 32 memory cells are alternately performed in 64 clock cycles.
申请公布号 US2004059976(A1) 申请公布日期 2004.03.25
申请号 US20030383553 申请日期 2003.03.10
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MAENO HIDESHI
分类号 G01R31/28;G01R31/3183;G11C29/12;G11C29/20;(IPC1-7):G11C29/00;G06F11/00 主分类号 G01R31/28
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