| 摘要 |
<PICT:0970765/C1/1> Silicon is deposited as a monocrystalline layer on a surface of monocrystalline silicon heated to a temperature of at least 800 DEG C. from vapour formed by an intermittent electric discharge between silicon electrodes at a pressure of not more than 10-5 mm. of Hg. A spark or arc discharge may be employed. The spark gap may be 5 mm. The electrodes may have a diameter of at least 1-2 cm. and may be rotated. They may be moved alternately towards and away from the deposition surface. They may be preheated. The vessel walls and electrode mountings may be cooled. The deposition surface may have been etched with chlorine. Deposition may be effected on a plurality of small silicon crystals attached to an electrically heated base of molydenum, silicon or siliconized graphite, resistance, induction or capacitive heating being employed. The deposition surface may be 7 cm. from the electrodes. A doped layer may be produced from doped electrodes. As shown in Fig. 4, silicon from electrodes 1 and 2 passes through an opening in a wall A of molybdenum and is deposited on silicon crystals K on an electrically heated base U in an evacuated vessel B of quartz. As shown in Fig. 3, each silicon electrode is attached to a carbon mounting a embedded in a water-cooled copper sleeve b. |
