| 摘要 |
<p>The method for manufacturing an integrated circuit according to the invention starts with providing a pre-fabricated integrated circuit (10) having a surface (11) coated with a dielectric material (12), a barrier layer (14) and a metal (15). The dielectric material (12), which is separated from the metal (15) by the barrier layer (14), has an opening (13), which is filled with the metal (15). Portions of the metal (15) outside the opening (13) are removed by a first chemical mechanical polishing step, which preferentially removes the metal (15) to locally expose the barrier layer (14). Portions of the locally exposed barrier layer (14) are removed by a second chemical mechanical polishing step, which preferentially removes the barrier layer (14). According to the invention, the first chemical mechanical polishing step is repeated after the second chemical mechanical polishing step has been carried out. The apparatus is able to perform the method. The computer program is able to control the method.</p> |
