| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the resistance of a word line(gate electrode), to suppress joint leak, to ensure the breakdown voltage of a gate insulating film, to suppress short channel effects by extending effective channel length, and to stabilize the transistor characteristics. <P>SOLUTION: This semiconductor device is constituted of a semiconductor substrate 11, a groove 14 formed in the semiconductor substrate 11, a channel diffused layer 15 formed in the semiconductor substrate 11 at the bottom of the groove 14, a word line(gate electrode) 18 buried through a gate insulating film 16 in the groove 14, a groove 183 formed at the groove 14 side wall at the upper part of the word line 18, a side wall insulating film 20 formed at the wide wall of the groove 14 on the word line 18 buried in the groove 183, a diffused layer 19 formed at the surface side of the semiconductor substrate 11 at the groove 14 side wall, and a silicide layer 21 formed in the upper layer of the word line 18 positioned higher than the bottom of the side wall insulating film 20. <P>COPYRIGHT: (C)2004,JPO |
