| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element fabricating process in which a substrate can be ground without yielding breaks. <P>SOLUTION: After forming an element structure 20 by using a nitride semiconductor on a substrate 11 consisting of GaN, a planarized layer 33 consisting silicon grease is formed on the element structure 20. After that, the substrate 11 is mounted on a lower electrode 43 positioned opposite to an upper electrode 42, with the planarized layer 33 in contact with the lower electrode and then is ground by RIE. On account of no mechanical force applied to the substrate 11, the substrate 11 can be ground without yielding breaks in the substrate 11. Further, a gap between the substrate 11 and the lower electrode 43 is filled with the planarized layer 33, so that temperature distribution within a surface of the substrate 11 is prevented. Consequently, the substrate 11 can be ground uniformly to enable properties of the element to be equalized. <P>COPYRIGHT: (C)2004,JPO |
