| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a minute electrode, having small ohmic contact resistance and inherent resistance, on the minute curved surface or plane of the surface of a minute spherical semiconductor element with high accuracy and good productivity without generating internal short-circuit. <P>SOLUTION: At least one electrode is formed by applying conductive ink on the surface of the spherical semiconductor element through ink jet system and effecting heat treatment. For instance, a first electrode is formed on the exposed surface of a first spherical conductive semiconductor and a second electrode is formed on the outer peripheral surface of a second conductive semiconductor layer for the spherical semiconductor element employed mainly for photoelectric conversion respectively. <P>COPYRIGHT: (C)2004,JPO</p> |
