| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide sintered compact for a sputtering target and for ion plating with which an oxide transparent electrically conductive film having a low resistance and excellent transmissibility in an infrared ray region can be produced, and high speed film deposition is made possible. <P>SOLUTION: This oxide sintered compact essentially consists of indium and comprises tungsten, and has a specific resistance of ≤1 kΩcm. Alternatively, the oxide sintered compact essentially consists of indium and comprises tungsten and tin, and has a specific resistance of ≤1 kΩcm. The content of tungsten is desirably 0.001 to 0.17 in a W/In atomic ratio. Desirably, the sintered compact consists of an indium oxide crystal phase with a bixbyite type structure in which tungsten is mainly allowed to enter into solid solution and/or an indium tungstate compound crystal phase, and a tungsten oxide crystal phase is not present. <P>COPYRIGHT: (C)2004,JPO |
