| 摘要 |
PROBLEM TO BE SOLVED: To securely burn out a fuse formed in an upper layer of a chip by laser blow using an infrared laser beam. SOLUTION: A semiconductor integrated circuit includes a wiring member formed on a main face of a semiconductor substrate, a fusing member which is connected to the wiring member and has a prescribed thickness, a barrier member which covers the bottom face and side faces of the fusing member, a light absorbing member which covers at least side face portions of the barrier member which covers the fusing member, and an insulating member which embeds the wiring member, the fusing member, the barrier member, and the light absorbing member. The complex permittivity of the light absorbing member has a real number part that is smaller in absolute value than that of the fusing member and an imaginary number part that is larger than that of the fusing member. The thickness of the light absorbing member is preferably 50% or more and 300% or less of the thickness that shows a maximum absorption efficiency for the light used to burn out the fusing member. The light absorbing member is composed of tantalum nitride, tungsten nitride, titanium nitride, or the like. COPYRIGHT: (C)2004,JPO |
