| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method for reducing a leak current in a source/drain region silicified by a salicide technique. SOLUTION: The method for manufacturing the semiconductor device has steps of: forming a trench 4 in which the vicinity of a boundary between the wall surface and the surface of a substrate 1 is rounded as a curved surface to bury an insulating film in the trench; forming a gate electrode 11, an LDD region 12 and the side wall 13 of a gate electrode; processing the insulating film near the upper end of the trench 4 in a tapered manner so that the insulating film does not come into contact with the curved surface; forming a source/drain region 15 along the curved surface 1a; and forming a metal silicide 18 on the surface of the source/drain region containing the curved surface 1a so as to be self-adjusted in the source/drain region. Further, this semiconductor device is formed by this method. COPYRIGHT: (C)2004,JPO
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