| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that a Q-value in the capacitance of a parasitic element between a metal layer and a substrate in a conventional MIM(metal insulator metal) capacitance is bad and, therefore, the Q-value of the MIM capacitance including the parasitic element becomes also bad. SOLUTION: A structure, comprising a capacitance having a high Q-value in parallel to a parasitic capacitance, is employed in order to improve the Q-value of the parasitic capacitance between the metal layer and the substrate of the MIM capacitance whereby the Q-value of the parasitic capacitance is improved and the Q-value of the whole of MIM capacitance including the parasitic element is also improved. COPYRIGHT: (C)2004,JPO
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