| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device and data reading method capable of correctly reading data with high accuracy. SOLUTION: This semiconductor memory device comprises a data output buffer for inputting data in response to an ontime control signal, buffering the inputted data in response to a latch clock signal and latching and outputting the inputted signal, a first clock signal generating circuit for generating a first clock signal to be reference, a latency signal generating circuit for setting a latency signal at the time of setting a mode and generating the latency signal, a second clock signal generating circuit for inputting the first clock signal and generating a second clock signal that is variable by the latency signal, a latch clock signal generating circuit for generating a latch clock signal in response to the first clock signal and the latency signal, and an ontime control signal generating circuit for generating an ontime control signal in response to the second clock signal and the latency signal. COPYRIGHT: (C)2004,JPO
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