| 摘要 |
A method for rapidly depositing a borosilicate glass film on a semiconductor wafer includes controlling the pressure within the chamber, introducing oxygen into the chamber, introducing a carrier gas into the chamber, injecting triethyl borate ("TEB") and tetraethyl orthosilicate ("TEOS") into the chamber, stabilizing the injection of TEB and TEOS, adjustably spacing a heater relative to the chamber, introducing ozone gas into the chamber, and depositing borosilicate glass film at a rate of at least about 4,500 angstroms per minute.
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