发明名称 Low temperature UV pretreating of porous low-k materials
摘要 A method of forming a coating on a substrate. A coating is formed on a substrate by depositing a solution comprising a resin molecule containing at least 2 Si-H groups, at least 2 Si-CH3 groups, or a combination thereof, and, a solvent in a manner in which at least about 5 volume % of the solvent remains in the coating after deposition, followed by exposing the coating to UV radiation at a power and wavelength spectrum sufficient to cause hydrolysis of the Si-H groups, Si-CH3 groups, or combination thereof, and at least partial condensation, and evaporating the solvent from the coating to form a porous network coating. The method enables production of low-k materials without treatment with ammonia.
申请公布号 US2004058090(A1) 申请公布日期 2004.03.25
申请号 US20030623712 申请日期 2003.07.21
申请人 WALDFRIED CARLO;HAN QINGYUAN;ESCORCIA ORLANDO;BERRY IVAN L.;BREMMER JEFF;DEMBOWSKI PHIL 发明人 WALDFRIED CARLO;HAN QINGYUAN;ESCORCIA ORLANDO;BERRY IVAN L.;BREMMER JEFF;DEMBOWSKI PHIL
分类号 C23C16/44;C09D183/02;C09D183/04;H01L21/312;H01L21/316;(IPC1-7):B05D3/06 主分类号 C23C16/44
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