发明名称 METHOD AND APPARATUS FOR TUNING AN RF MATCHING NETWORK IN A PLASMA ENHANCED SEMICONDUCTOR WAFER PROCESSING SYSTEM
摘要 A method and apparatus for operating a matching network within a plasma enhanced semiconductor wafer processing system that uses pulsed power to facilitate plasma processing.
申请公布号 WO03090351(A3) 申请公布日期 2004.03.25
申请号 WO2003US09937 申请日期 2003.03.31
申请人 APPLIED MATERIALS, INC. 发明人 TODOROW, VALENTIN;HOLLAND, JOHN;GANI, NICOLAS
分类号 H01J37/32;H03H7/40 主分类号 H01J37/32
代理机构 代理人
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