| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain a highly reliable LED (light emitting diode) which is excellent in an electrical characteristic and of which the light emitting luminance is high. <P>SOLUTION: The LED has a light emitting structure where a group III-V compound semiconductor containing nitrogen is formed on a group III-V compound semiconductor substrate through a buffer layer which is formed of a group III-V compound semiconductor growth layer containing nitrogen and a group V element other than nitrogen. Electrodes are formed on a part of the substrate and on a part of the growth layer on the side opposite to the substrate. The buffer layer is formed of a plurality of epitaxial growth layers of various compositions, and the composition of the buffer layer varies continuously. <P>COPYRIGHT: (C)2004,JPO |
