| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electronic device of excellent characteristics that comprises a metal thin film and a functional thin film having a wurzite crystal structure of c-plane uni-orientation and high crystallinity on an Si(100) substrate. <P>SOLUTION: The substrate for an electronic device comprises a metal thin film 4 which is a (111) alignment film of a face centered cubic structure or a (001) alignment film of a hexagonal close-packed structure, and a wurzite thin film 5 which is a (001) alignment film of wurzite structure. Both thin films are a polycrystal film containing at least two kinds of crystal particles with different crystal orientation in plane. If the metal thin film 4 is a (111) alignment film, <1-10> axis in the plane of metal thin film 4 is parallel to <11-20> axis in the plane of wurzite thin film 5. If the metal film 4 is a (0001) alignment film, <11-20> axis in the plane of metal thin film 4 is parallel to <11-20> axis in the plane of wurzite thin film 5. <P>COPYRIGHT: (C)2004,JPO |
