发明名称 EXHAUST GAS TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To lower the temperature of the exhaust gas generated during the manufacturing process of semiconductor without requiring a large amount of cooling air. <P>SOLUTION: The treatment apparatus A has a combustion chamber 1, a secondary air inlet hole 9, a combustion exhaust gas discharge path 4 and a heat exchanger 5 provided near the combustion chamber 1. The combustion exhaust gas discharge path 4 is connected to a supply port of the heat exchanger 5, and the combustion chamber 1 and the heat exchanger 5 are housed in a storage container 6. The combustion chamber 1 has a closed end, on the side of which an exhaust gas supply path 2 and a burner 3 are arranged. The burner 3 raises the temperature of the exhaust gas supplied into the combustion chamber 1 to decompose or burn it, and the heat exchanger 5 lowers the temperature of the gas with the air taken in from the secondary air inlet hole 9 to discharge it. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004092985(A) 申请公布日期 2004.03.25
申请号 JP20020253739 申请日期 2002.08.30
申请人 KOIKE SANSO KOGYO CO LTD;TOKYO GAS CHEMICALS CO LTD;TOKYO GAS CO LTD 发明人 KOIKE YASUO;BOKU HEISHO;KIN HEITETSU;NAKAMURA KENICHI;SUGIHARA KENICHI;SEO ATSUKO
分类号 F23G5/44;B01D53/46;B01D53/68;B01D53/70;F23G5/46;F23G7/06;F23J15/06;H01L21/205 主分类号 F23G5/44
代理机构 代理人
主权项
地址