| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a III-group nitride semiconductor crystal whereby the high-quality nitride semiconductor crystal can be formed on a substrate, in a process having a comparably little change in temperature, by utilizing a semiconductor-crystal growing method using the substrate having an irregularly processed surface. <P>SOLUTION: By feeding a III-group raw material to a substrate having an irregularly processed surface while adopting a V/III ratio not larger than 1,000 (inclusive of the case of the V/III ratio being zero), a III-group nitride semiconductor (the III-group nitride semiconductor is represented by InGaAlN) is formed. Thereafter, the vapor-phase epitaxy of a III-group nitride semiconductor crystal is performed by using the III-group raw material and a nitrogen raw material. <P>COPYRIGHT: (C)2004,JPO |
